Superior suppression of gate current leakage in Al2O 3/Si3N4 bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

Journal of Electronic Materials

Volumn 34, Issue 4, 2005, Pages 361-364

  Wang, C X ^a   Maeda, N ^a   Hiroki, M ^a   Tawara, T ^b   Makimoto, T ^b   Kobayahsi, T ^a   Enoki, T ^a  

^a NTT CORPORATION   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

Heterostructure field effect transistor (HFET); Metal insulator semiconductor (MIS)

Indexed keywords

ALUMINA; HETEROJUNCTIONS; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; PERMITTIVITY; SILICON COMPOUNDS; TRANSCONDUCTANCE;

DIELECTRIC LAYER; ELECTRON CYCLOTRON RESONANCE (ECR); HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR (HFET); METAL-INSULATOR-SEMICONDUCTOR (MIS);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 18144420820     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0111-8     Document Type: Conference Paper

References (17)

1. M. Asif Khan, J.M. Van Hove, J.N. Kuznia, and D.T. Olsen, Appl. Phys. Lett. 58, 2408 (1991).
2. N. Maeda, K. Tsubaki, T. Saitoh, and N. Kobayashi, Appl. Phys. Lett. 79, 1634 (2001).
3. F. Eastman, V. Tilak, J. Smart, B.M. Green, E.M. Chumbes, R. Dimitrov, H. Kim, O.S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W.J. Schaff, and J.R. Shealy, IEEE Trans. Electron Dev. 48, 497 (2001).
4. Huili Xing, Y. Dora, A. Chini, S. Heikman, S. Keller, and U.K. Mishra, IEEE Electron Dev. Lett. 25, 161 (2004).
5. Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P.M. Chavarkar, T. Wisleder, U.K. Mishra, and P. Parikh, IEEE Electron Dev. Lett. 25, 117 (2004).
6. N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida, and N. Kobayashi: Jpn. J. Appl. Phys. Part 2 38, L987 (1999).
7. E.J. Miller, X.Z. Dang, and E.T. Yu, J. Appl. Phys. 88, 5951 (2000).
8. H. Hasegawa, T. Inagaki, S. Ootomo, and T. Hashizume, J. Vac. Sci. Technol. B 21, 1844 (2003).
9. M. Asif Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, and M.S. Shur, Appl. Phys. Lett. 77, 1339 (2000).
10. X. Hu, A. Koudymov, G. Simin, J. Yang, M. Asif Khan, A. Tarakji, M.S. Shur, and R. Gaska: Appl. Phys. Lett. 79, 2832 (2001).
11. M. Asif Khan, G. Simin, J.W. Yang, J.P. Zhang, A. Koudymov, M.S. Shur, R. Gaska, X. Hu, and A. Tarakji, IEEE Trans. Electron Dev. 51, 624 (2003).
12. T. Hashizume, S. Ootomo, and H. Hasegawa, Appl. Phys. Lett. 83, 2952 (2003).
13. N. Maeda, T. Tawara, T. Saitho, K. Tsubaki, and N. Kobayashi, Phys. Status Solidi A 200, 168 (2003).
14. W.S. Tran, P.A. Houston, P.J. Parbook, G. Hill, and R.J. Airey, J. Phys. D 35, 595 (2002).
15. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. (New York: John Wiley & Sons, 1981), pp 254-258.
16. S. Karmalkar, D.M. Sathaiya, and M.S. Shur, Appl. Phys. Lett. 82, 3976 (2003).
17. E.J. Miller, E.T. Yu, P. Waltereit, and S.S. Speck, Appl. Phys. Lett. 84, 535 (2004).