Fabrication of sub-50-nm-gate i-AlGaN/GaN HEMTs on sapphire

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2368-2371

  Endoh, Akira ^a   Yamashita, Yoshimi ^a   Ikeda, Keiji ^a   Higashiwaki, Masataka ^b   Hikosaka, Kohki ^a   Matsui, Toshiaki ^b   Hiyamizu, Satoshi ^c   Mimura, Takashi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DC AND RF CHARACTERISTICS; DEVICE OPERATIONS; DRAIN-SOURCE VOLTAGE; GATE LENGTH; HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); ROOM TEMPERATURE; SHORT-CHANNEL EFFECT; SOURCE-DRAIN;

CUTOFF FREQUENCY; FABRICATION; GALLIUM NITRIDE; SAPPHIRE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84875108691     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303335     Document Type: Conference Paper

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