Growth and passivation of AlGaN/GaN heterostructures

Journal of Crystal Growth

Volumn 250, Issue 1-2, 2003, Pages 7-13

  Shealy, J R ^a   Prunty, T R ^a   Chumbes, E M ^a   Ridley, B K ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

A3. Organometallic vapor phase epitaxy; B1. Nitrides; B3. High elecron mobility transistors

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

POLARIZATION CHARGE;

VAPOR PHASE EPITAXY;

EID: 0037370339     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02187-5     Document Type: Conference Paper

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