SiO2/AlGaN/GaN MOSHFET with 0.7 μm gate-length and f max/fTof 40/24 GHz

Electronics Letters

Volumn 41, Issue 11, 2005, Pages 667-668

  Bernat J ^a   Gregusova D ^b   Heidelberger, G ^a   Fox, A ^a   Marso, M ^a   Luth H ^a   Kordos P ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; MISFET DEVICES; NATURAL FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICA;

FREQUENCY PERFORMANCE; MISHFET; MOSHFET; SHEET CARRIER DENSITY;

MOSFET DEVICES;

EID: 20344405264     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20050556     Document Type: Article

References (7)

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6. Bernát, J., Javorka, P., Marso, M., and Kordoš, P.: 'Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation', App. Phys. Lett., 2003, 83, pp. 5455-5457
7. max of 27/22 GHz for 0.5/0.7 μm gate length', Electron. Lett., 2002, 38, pp. 288-289