High temperature characteristics of doped channel AlGaN/GaN MIS-HFETs with thin AlGaN barrier layer

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2317-2320

  Wang, C X ^a   Maeda, N ^a   Hiroki, M ^a   Yokoyama, Y ^a   Makimoto, T ^b   Kobayashi, T ^a   Enoki, T ^a  

^a NTT CORPORATION   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAN CHANNEL; METAL-INSULATOR-SEMICONDUCTOR HETEROSTRUCTURE; REVERSE GATE BIAS; THIN ALGAN BARRIER LAYER; 72.80.EY; 73.40.QV; 85.30.TV; ELEVATED TEMPERATURE; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; HIGH TEMPERATURE CHARACTERISTICS; METAL-INSULATOR-SEMICONDUCTORS; SATURATION DRAIN CURRENT;

FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; LEAKAGE CURRENTS; MIM DEVICES; TRANSCONDUCTANCE;

SEMICONDUCTING ALUMINUM COMPOUNDS; MIS DEVICES;

EID: 33746326141     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565149     Document Type: Conference Paper

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