Doping design of GaN-based heterostructure field-effect transistors with high electron density for high-power applications

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 168-174

  Maeda, Narihiko ^a   Tawara, Takehiko ^b   Saitoh, Tadashi ^b   Tsubaki, Kotaro ^c   Kobayashi, Naoki ^d  

^a NTT CORPORATION   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c TOYO UNIVERSITY   (Japan)

^d UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC CURRENT CONTROL; ELECTRON GAS; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTOR DOPING; THIN FILMS; TWO DIMENSIONAL;

BACK DOPING; CHANNEL DOPING; HETEROJUNCTION FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 0346398294     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303468     Document Type: Article

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