DC and RF characteristics in Al2O3/Si 3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 20-23, 2005, Pages

  Maeda, Narihiko ^a   Makimura, Takashi ^a   Maruyama, Takashi ^b   Wang, Chengxin ^a   Hiroki, Masanobu ^a   Yokoyama, Haruki ^a   Makimoto, Toshiki ^c   Kobayashi, Takashi ^a   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

^b NTT Advance Technology Corporation   (Japan)

^c NTT Basic Research Laboratories   (Japan)

Author keywords

Al2O3; AlGaN; Cutoff frequency (fT); GaN; Gate leakage current; HFET; Insulated gate; Maximum oscillation frequency (fmax); Metal insulator semiconductor (MIS); Si3N4

Indexed keywords

CURRENT DENSITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; SILICON NITRIDE; TRANSCONDUCTANCE;

AL2O3; ALGAN; CUTOFF FREQUENCY (FT); GAN; GATE LEAKAGE CURRENT; HFET; INSULATED-GATE; METAL-INSULATOR-SEMICONDUCTOR (MIS); SI3N4;

ALUMINA;

EID: 23944498561     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L646     Document Type: Article

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