Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors

Solid-State Electronics

Volumn 48, Issue 2, 2004, Pages 363-366

  Hwang, Jeonghyun ^a   Schaff, William J ^a   Green, Bruce M ^a   Cha, Hoyoung ^a   Eastman, Lester F ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

AlGaN GaN HFETs; AlN; Surface passivation

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

SURFACE PASSIVATION;

FIELD EFFECT TRANSISTORS;

EID: 0242271869     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00324-1     Document Type: Article

References (11)

1. Green B.M., Chu K.K., Chumbes E.M., Smart J.A., Shealy J.R., Eastman L.F. IEEE Electron. Dev. Lett. 21:2000;268.
2. Vetury R., Zhang N.W., Keller S., Mishra U.K. IEEE Trans. Electron. Dev. 48:2001;560.
3. Tan W.S., Houston P.A., Parbrook P.J., Hill G., Airey R.J. J. Phys. D: Appl. Phys. 35:2002;595.
4. Luo B., Mehandru R., Kim J., Ren F., Gila B.P., Onstine A.H.et al. J. Electrochem. Soc. 149:2002;G613.
5. Gillespie J.K., Fitch R.C., Sewell J., Dettmer R., Via G.D., Crespo A.et al. IEEE Electron. Dev. Lett. 23:2002;505.
6. Simin G., Koudymov A., Tarakji A., Hu X., Yang J., Asif Khan M.et al. Appl. Phys. Lett. 79:2001;2651.
7. Hashizume T., Aleksee E., Pavlidis D., Boutros K.S., Redwing J. J. Appl. Phys. 88:2000;1983.
8. Hashizume T., Ootomo S., Oyama S., Konishi M., Hasegawa H. J. Vac. Sci. Technol. B. 19:2001;1675.
9. Murphy M.J., Chu K., Wu H., Yeo W., Schaff W.J., Ambacher O.et al. Appl. Phys. Lett. 75:1999;3653.
10. Horikoshi Y. Semicond. Sci. Technol. 8:1993;1032.
11. Barton T.M., Radbrooke P.H. Solid-State Electron. 29:1986;807.