Heteroepitaxial growth of InN islands studied by STM and AFM

Journal of Physics D: Applied Physics

Volumn 35, Issue 7, 2002, Pages 615-619

  Norenberg C ^a   Martin, M G ^a   Oliver, R A ^a   Castell, M R ^a   Briggs, G A D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM NITRIDE; LATTICE CONSTANTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

ADSORBATE STRUCTURES; ATOMIC RESOLUTION; HETEROEPITAXIAL GROWTH; LATTICE MISMATCH; QUANTUM CONFINEMENT; STRAIN INDUCED SELF ASSEMBLY; SURFACE DIFFUSION; SURFACE ENERGY BALANCE; SURFACE RECONSTRUCTIONS; TWO DIMENSIONAL GROWTH;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037035253     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/35/7/308     Document Type: Article

References (9)