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Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2289-2292

Morphology and optical properties of InN layers grown by molecular beam epitaxy on silicon substrates

(4) Grandal, J a Sanchez Garcia M A a Calle, F a Calleja, E a

a Polytechnic University of Madrid (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; CRYSTALLINE MATERIALS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SILICON; SUBSTRATES;

FULL WIDTH AT HALF MAXIMUM (FWHM); NITROGEN MOLECULAR FLUX RATIO; SILICON SUBSTRATES;

INDIUM COMPOUNDS;

EID: 27344436080 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200461571 Document Type: Conference Paper

Times cited : (23)

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