The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 497-507

  Dimakis, E ^b   Konstantinidis, G ^b   Tsagaraki, K ^b   Adikimenakis, A ^b   Iliopoulos, E ^b   Georgakilas, A ^a  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EVAPORATION; FILM GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NITRIDING; NUCLEATION; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; THERMAL EFFECTS;

ADATOM MOBILITY; INN; MISFIT DISLOCATION; RADIO FREQUENCY MOLECULAR BEAM EPITAXY (RFMBE); STRAIN RELAXATION;

INDIUM COMPOUNDS;

EID: 9944231917     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.010     Document Type: Article

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