GaN nanocolumns on Si(111) grown by molecular beam epitaxy

ASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes

Volumn , Issue , 2004, Pages 9-12

  Calarco, R ^a   Marso, M ^a   Meijers, R ^a   Richter, T ^a   Aykanat, A I ^a   Stoica, T ^a,b   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Institute of Atomic Physics   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SILICON; WIRE PRODUCTS;

CURRENT-VOLTAGE; ELECTRICAL CONTACTS; NANOCOLUMNS;

EPITAXIAL GROWTH;

EID: 28844459055     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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