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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 337, Issue 1-2, 2005, Pages 121-126

Fabrication of ordered InN nanowire arrays and their photoluminescence properties

(5) Zhang, Jun a Xu, Baolong a Jiang, Feihong a Yang, Yongdong a Li, Jianping a

a YANTAI UNIVERSITY (China)

Author keywords

Nanocrystalline materials; Photoluminescence; Semiconductor

Indexed keywords

ALUMINA; ALUMINUM OXIDE; AMMONIA; BLUE SHIFT; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALS; NANOWIRES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; WIDE BAND GAP SEMICONDUCTORS;

ANODIC ALUMINA MEMBRANES; ASSEMBLY SYSTEMS; BAND-GAP EMISSION; GREEN PHOTOLUMINESCENCE; PHOTOLUMINESCENCE PROPERTIES; QUANTUM CONFINEMENT EFFECTS; SCAN ELECTRON MICROSCOPY; WAVELENGTH RANGES;

SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM OXIDE; AMMONIA; INDIUM;

ARTICLE; DEVICE; NANOTECHNOLOGY; PHOTOLUMINESCENCE; PHYSICAL CHEMISTRY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 14644430320 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/j.physleta.2005.01.048 Document Type: Article

Times cited : (31)

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