Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

IEEE Electron Device Letters

Volumn 26, Issue 6, 2005, Pages 348-350

  Moon, J S ^a   Wu, Shihchang ^b   Wong, D ^a   Milosavljevic, I ^a   Conway, A ^c   Hashimoto, P ^a   Hu, M ^a   Antcliffe, M ^a   Micovic, M ^a  

^a Hughes Aircraft Co   (United States)

^b BOEING COMPANY   (United States)

^c UNIVERSITY OF SAN DIEGO   (United States)

Author keywords

Field effect transistor (FET); GaN; HEMT; Millimeter wave (mmWave)

Indexed keywords

FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; MILLIMETER WAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; HIGH PERFORMANCE MILLIMETER WAVE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 20544448948     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.848107     Document Type: Article

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