Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05 Ga0.95N/GaN HEMTs

IEEE Electron Device Letters

Volumn 26, Issue 8, 2005, Pages 521-523

  Cheng, Zhiqun ^a,b   Liu, Jie ^a   Zhou, Yugang ^a   Cai, Yong ^a   Chen, Kevin J ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

AlGaN GaN; Composite channel HEMT (CC HEMT); Linearity; Noise figure

Indexed keywords

GALLIUM NITRIDE; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE;

COMPOSITE CHANNEL HEMT; NOISE FIGURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 23844469090     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.850531     Document Type: Article

References (11)

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