Wideband AlGaN/GaN HEMT MMIC low noise amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2004, Pages 153-156

  Ellis, Grant A ^a   Moon, Jeong Sun ^a   Wong, Danny ^a   Micovic, Miroslav ^a   Kurdoghlian, Ara ^a   Hashimoto, Paul ^a   Hu, Ming ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

AlGaN GaN; HEMT; Low noise amplifier (LNA); Silicon Carbide (SIC)

Indexed keywords

CIRCUIT DIAGRAM; LOW NOISE AMPLIFIER; MULTIPLE OCTAVES; SIGNAL MODEL;

ACOUSTIC NOISE; ALUMINUM COMPOUNDS; AMPLIFIERS (ELECTRONIC); ELECTRIC POTENTIAL; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SILICON CARBIDE;

SEMICONDUCTOR MATERIALS;

EID: 4444301428     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. W. Nagy, J. Brown, R. Borges, and S. Singhal, "Linearity Characteristics of Microwave-Power GaN HEMTs," IEEE Trans. Microwave Theory and Techniques, vol. 51 (no. 2), pp 660-664, Feb. 2003.
2. J.S. Moon, M. Micovic, A. Kurdoghlian, P. Janke, P. Hashimoto, W.-S. Wong, L. McCray, and C. Nguyen, "Microwave Noise Performance of AlGaN-GaN HEMTs with Small DC Power Dissipation," IEEE Electron Device Letters, vol. 23, (no. 11), pp 637-639, Nov. 2002.
3. R. Welch, T. Jenkins, B. Neidard, L. Kehias, T. Quach, P. Watson, R. Worley, M. Barsky, R. Sandhu, and M. Wojtowicz, "Low Noise Hybrid Amplifier Using AlGaN/GaN Power HEMT Devices," 2001 GaAs IC Symposium, pp 153-155.
4. S. Hsu, D. Pavlidis, J.S. Moon, M. Micovic, C. Nguyen, and D. Grider, "Low Noise AlGaN/GaN MODFETs with High Breakdown and Power Characteristics," 2001 GaAs IC Symposium, pp 229-232.
5. Sonnet em Suite 8.0. Vol. 2, pp 210-211.