Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation

IEEE Electron Device Letters

Volumn 23, Issue 11, 2002, Pages 637-639

  Moon, J S ^a   Micovic, M ^a   Kurdoghlian, A ^a   Janke, P ^a   Hashimoto, P ^a   Wong, W S ^a   McCray, L ^a   Nguyen, C ^b  

^a Hughes Aircraft Co   (United States)

^b Global Communication Semiconductors   (United States)

Author keywords

Gallium compounds; Microwave devices; Noise measurement; Semiconductor device noise

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC LOSSES; ELECTRIC POTENTIAL; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS;

MICROWAVE NOISE PERFORMANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036864458     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.803766     Document Type: Article

References (11)

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