III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films

Applied Physics Letters

Volumn 86, Issue 3, 2005, Pages 1-3

  Cai, Y ^a   Zhou, Y G ^a   Chen, K J ^a   Lau, K M ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; FREQUENCIES; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; THIN FILMS;

CUTOFF FREQUENCY; DRAIN SATURATION CURRENTS; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFET); POWER GAIN;

FIELD EFFECT TRANSISTORS;

EID: 17044434677     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1855403     Document Type: Article

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