High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate

Electronics Letters

Volumn 39, Issue 24, 2003, Pages 1758-1760

  Kumar, V ^a   Kuliev, A ^a   Tanaka, T ^b   Otoki, Y ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b HITACHI CABLE LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; OSCILLATIONS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SUBSTRATES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; GAIN CUTOFF FREQUENCY; TRANSCONDUCTANCE ENHANCEMENT MODE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0344272244     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031124     Document Type: Article

References (7)

1. Wu, Y.F., et al.: 'High A1-content A1GaN/GaN HEMTs on SiC substrates with very-high performance', IEDM Tech. Dig., 1999, pp. 927-929
2. Sheppard, S.T., et al.: 'High power microwave GaN/A1GaN HEMTs on silicon carbide', IEEE Electron Device Lett., 1999, 20, pp. 161-163
3. T of over 120 GHz', IEEE Electron Device Lett., 2002, 23, pp. 455-457
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5. Khan, M.A., et al.: 'Enhancement and depletion mode GaN/A1GaN heterostructure field effect transistors', Appl. Phys. Lett., 1996, 68, pp. 514-516
6. Hu, X., et al.: 'Enhancement mode A1GaN/GaN HFET with selectively grown pn junction gate', Electron Lett., 2000, 36, pp. 753-754
7. Moon, J. S., et al.: 'Submicron enchancement-mode A1GaN/GaN HEMTs'. 60th Device Research Conf., Santa Barbara, CA, USA, 2002, pp. 23-25