Monolithic integration of enhancement- And depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 771-774

  Cai, Yong ^a   Cheng, Zhiqun ^a   Tang, Wilson Chak Wah ^a   Chen, Kevin J ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC POTENTIAL; HIGH ELECTRON MOBILITY TRANSISTORS; LOGIC CIRCUITS; MONOLITHIC INTEGRATED CIRCUITS; OSCILLATORS (ELECTRONIC);

DIRECT-COUPLED FET LOGIC CIRCUITS; OUTPUT LOGIC SWING; SUPPLY VOLTAGE;

DIGITAL INTEGRATED CIRCUITS;

EID: 33746514769     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. I. Daumiller, C. Kirchner, M. Kamp, K. J. Ebeling, and E. Kohn, "Evaluation of the Temperature Stability of AlGaN/GaN Heterostructure FET's", IEEE Electron Device Lett., vol. 20, No. 9, pp. 448-450, Sep. 1999.
2. Neudeck, P.G., Okojie, R.S., Liang-Yu Chen,"High-temperature electronics - a role for wide bandgap semiconductors?", Proceedings of the IEEE, Vol 90, pp. 1065 -1076, Jun 2002.
3. T. Egawa, G. Y. Zhao, H. Ishikawa, M. Umeno, and T. Jimbo, "Characterizations of Recessed Gate AlGaN/GaN HEMTs on Sapphire", IEEE Trans. Electron Devices, Vol. 48, No. 3, pp. 603-608, Mar. 2003.
4. S. Long and S. E. Butner, Gallium Arsenide Digital Integrated Circuit Design, New York, McGraw-Hill, 1990.
5. K. Joshin, T. Kikkawa, H. Hayashi, S. Yokogawa, M. Yokoyama, N. Adachi, and M. Takikawa, "A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications," in IEDM Tech. Dig., pp. 983-985, Dec. 2003.
6. Y. F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, "30-W/mm GaN HEMTs by Field Plate Optimization", IEEE Electron Device Lett., vol. 25, no. 3, pp. 117-119, Mar. 2004.
7. J. S. Moon, D. Wang, T. Hussain, M. Mocovic, P. Deelman, M. Hu, M. Antcliffe, C. Ngo, P. Hashimoto, L. McCray, "Submicron Enhancement-mode AlGaN/GaN HEMTs", Dig. 60th Device Research Conf., Santa Barbara, CA, USA, 2002, pp. 23-25.
8. T. Hussain, M. Micovic, T. Tsen, M. Delaney, D. Chow, A. Schmitz, P. Hashimoto, D. Wong, J.S. Moon, Ming Hu, J. Duvall and D. McLaughlin, "GaN HFET digital circuit technology for harsh environments", IEE Electronics Letts., vol. 39, no. 24, pp1708 - 1709, 2003.
9. Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau,"High-Performance Enhancement-Mode AlGaN/GaN HEMTs using Fluoride-based Plasma Treatment," IEEE Electron Device Lett., vol. 26, no. 7, pp. 435-437, 2005.