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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2255-2258

Non-recessed-gate enhancement-mode AlGaN/GaN high electron mobility transistors with high RF performance

(8) Endoh, Akira a Yamashita, Yoshimi a Ikeda, Keiji a Higashiwaki, Masataka b Hikosaka, Kohki a Matsui, Toshiaki b Hiyamizu, Satoshi c Mimura, Takashi a

a FUJITSU LABORATORIES LTD (Japan)

b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

c OSAKA UNIVERSITY (Japan)

Author keywords

Algan GaN; Barrier height; Cutoff frequency; Enhancement mode; HEMT; High electron mobility transistor; Maximum oscillation frequency; Normally off; Trans conductance

Indexed keywords

ANNEALING; COATING TECHNIQUES; ELECTRIC BREAKDOWN; ELECTRON GAS; GALLIUM NITRIDE; MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OSCILLATIONS; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SUBSTRATES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

BARRIER HEIGHTS; CUTOFF FREQUENCY; ENHANCEMENT MODES; MAXIMUM OSCILLATION FREQUENCY; NORMALLY-OFF;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 3142607131 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.2255 Document Type: Conference Paper

Times cited : (76)

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