Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors

Journal of Applied Physics

Volumn 86, Issue 6, 1999, Pages 3398-3401

  Sierakowski, Andrej J ^a   Eastman, Lester F ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005981607     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371240     Document Type: Article

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