A C-band high-dynamic range GaN HEMT low-noise amplifier

IEEE Microwave and Wireless Components Letters

Volumn 14, Issue 6, 2004, Pages 262-264

  Xu, Hongtao ^a   Sanabria, Christopher ^a   Chini, Alessandro ^a   Keller, Stacia ^a   Mishra, Umesh K ^a   York, Robert A ^a  

^a University of California   (United States)

Author keywords

GaN; High electron mobility transistor (HEMT); High linearity; Low noise amplifier (LNA)

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; ELECTRIC IMPEDANCE; GALLIUM NITRIDE; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

CUTOFF FREQUENCIES; GATE-LENGTHS; HIGH LINEARITY; LOW-NOISE AMPLIFIER (LNA);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 3042588296     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2004.828020     Document Type: Article

References (6)

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