High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates

IEEE Electron Device Letters

Volumn 25, Issue 4, 2004, Pages 167-169

  Minko, A ^a   Hoel, V ^a   Lepilliet, S ^a   Dambrine, G ^a   De Jaeger, J C ^a   Cordier, Y ^b   Semond, F ^b   Natali, F ^b   Massies, J ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b CRHEA CNRS   (France)

Author keywords

AlGaN; GaN; High electron mobility transistor (HEMT); Noise; Si(111)

Indexed keywords

AMPLIFIERS (ELECTRONIC); CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC BREAKDOWN; ENERGY GAP; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

HALL MEASUREMENT; HIGH-RESISTIVITY SILICON SUBSTRATES; LOW-NOISE AMPLIFIERS; MICROWAVE NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 1942455817     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.825208     Document Type: Letter

References (5)

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5. R. Behtash, H. Tobler, M. Neuburger, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, and J. Massies, "AlGaN-GaN HEMTs on Si (111) with 6.6 W/mm output power density," Electron. Lett., vol. 39, no. 7, pp. 626-628, Apr. 2003.