Linearity performance of GaN HEMTs with field plates

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 35-36

  Wu, Y F ^a   Saxler, A ^b   Wisleder, T ^a   Moore, M ^a   Smith, R P ^b   Sheppard, S ^b   Chavarkar, P M ^a   Parikh, P ^a  

^a Cree Santa Barbara Technology Center   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD PLATES (FP); PASSIVATION LAYERS; POWER DENSITY; QUIESCENT CURRENT;

ELECTRIC BREAKDOWN; FREQUENCIES; GALLIUM NITRIDE; INTERMODULATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; SEMICONDUCTOR DOPING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 15544377487     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367771     Document Type: Conference Paper

References (4)

1. Y.-F. Wu, A. Saxler, M. Moore, R.P. Smith, S. Sheppard, P.M. Chavarkar, T. Wisleder, U.K. Mishra, and P. Parikh, "30W/mm GaN HEMTs by field plate optimization", EDL, Vol. 25, pp. 117-119, Mar. 2004.
2. Y. Okamoto, Y. Ando, K. Hataya, K. Nakayama, H. Miyamoto, T. Inoue, M. Senda, K. Hirata, M Kosaki, N. Shibata, "149W recessed gate AlGaN/GaN FP-FET", IMS-2004 technical digest, June 6-11, 2004.
3. A. Chini, D. Buttari, R. Coffie, L. Shen, S. Heikman, A. Chakraborty, S. Keller, and U. K. Mishra, "Power and linearity characteristics of field-plated recessed-Gate AlGaN-GaN HEMTs", to be published in EDL, May 2004.
4. Y.-F. Wu, P.M. Chavakar, M. Moore, P. Parikh, and U.K. Mishra, "Linearity and gain characteristics of AlGaN/GaN HEMTs", IEDM-2002 technical digest, pp. 697-699, San Francisco, CA, Dec. 8-11, 2002.