Hafnium titanate as a high permittivity gate insulator: Electrical and physical characteristics and thermodynamic stability

Journal of Applied Physics

Volumn 101, Issue 4, 2007, Pages

  Li, Min ^a   Zhang, Zhihong ^a   Campbell, Stephen A ^a   Li, Hong Jyh ^b   Peterson, Jeff J ^b  

^a UNIVERSITY OF MINNESOTA   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC INSULATORS; ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; PERMITTIVITY; THERMODYNAMIC PROPERTIES;

GATE INSULATORS; HAFNIUM TITANATE; HIGH TEMPERATURE ANNEALING; STOICHIOMETRIC FILMS;

THIN FILMS;

EID: 33847681363     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2434833     Document Type: Article

References (34)

1. S. J. Lee, H. F. Luan, W. P. Bai, C. H. Lee, T. S. Jeon, Y. Senzaki, D. Roberts, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet. 31 (2000).
2. S. Sayan, S. Aravamudhan, B. W. Busch, W. H. Schulte, F. Cosandey, G. D. Wilk, T. Gustafsson, and E. Garfunkel, J. Vac. Sci. Technol. A 20, 507 (2002).
3. T. Ma, S. A. Campbell, R. Smith, N. Hoilien, B. He, IEEE Trans. Electron Devices 37, 2348 (2001).
4. V. V. Afanas'ev, A. Stesmans, F. Chen, M. Li, and S. A. Campbell, J. Appl. Phys. 95, 7936 (2004).
5. H. D. Kim, Y. Roh, Y. Lee, J. E. Lee, D. Jung, and N.-E. Lee, J. Vac. Sci. Technol. A 22, 1347 (2004).
6. G. D. Wilk, M. L. Green, M.-Y. Ho, B. W. Busch, T. W. Sorsch, Symposium on VLSI Circuits: Digest of Technical Papers 2002, 88.
7. W. Zhu, T. P. Ma, T. Tamagawa, Y. Di, J. Kim, R. Carruthers, M. Gibson, and T. Furukawa, Tech. Dig. - Int. Electron Devices Meet. 463 (2001).
8. M. Gutowski, J. E. Jaffe, C.-L. Liu, M. Stoker, R. I. Hegde, R. S. Rai, and P. J. Tobin, Appl. Phys. Lett. 80, 1897 (2002).
9. E. P. Gusev, E. Cartier, D. A. Buchanan, M. Gribelyuk, M. Copel, H. Okorn-Schmidt, and C. D'Emic, Microelectron. Eng. 59, 341 (2001).
10. J. Robertson, Appl. Surf. Sci. 190, 2 (2002).
11. B. H. Lee, R. Choi, L. Kang, S. Gopalan, R. Nieh, Tech. Dig. - Int. Electron Devices Meet. 2000, 39.
12. J. H. Sim, B. H. Lee, R. Choi, K. Mattbews, D. L. Kwong, L. Larson, P. Tsui, and G. Bersuker, Technical Digest-Device Research Conference, 99 (2004).
13. C. S. Kang, H.-J. Cho, R. Choi, Y.-H. Kim, C. Y. Kang, IEEE Trans. Electron Devices 51, 220 (2004).
14. K. Kukli, J. Ihanus, M. Ritala, and M. Leskela, Appl. Phys. Lett. 68, 3737 (1996).
15. F. Chen, X. Bin, C. Hella, X. Shi, W. L. Gladfelter, and S. A. Campbell, Microelectron. Eng. 72, 263 (2004).
16. M. A. Cameron and S. M. George, Thin Solid Films 348, 90 (1999).
17. C. J. Taylor, D. C. Gilmer, D. G. Colombo, G. D. Wilk, S. A. Campbell, J. Roberts, and W. L. Gladfelter, J. Am. Chem. Soc. 121, 5220 (1999).
18. J. R. Hauser and K. Ahmed, Characterization and Metrology for ULSI Technology: 1998 International Conference, 1998 (unpublished).
19. J. R. Hauser, IEEE Trans. Electron Devices 43, 1981 (1996).
20. M. Li, Z. Zhang, S. A. Campbell, W. L. Gladfelter, M. P. Agustin, D. O. Klenov, and S. Stemmer, J. Appl. Phys. 98, 054506 (2005).
21. K. Honda, A. Sakai, M. Sakashita, H. IkedaKEDA, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys., Part 1 43, 1571 (2004).
22. T. Ma (private communication).
23. C. Lee, P. Ghosez, and X. Gonze, Phys. Rev. B 50, 13379 (1994).
24. S. A. Campbell, H.-S. Kim, D. C. Gilmer, B. He, T. Ma, and W. L. Gladfelter, IBM J. Res. Dev. 43, 383 (1999).
25. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 40, 278 (1969).
26. Z. A. Weinberg, J. Appl. Phys. 53, 5052 (1982).
27. H. Y. Yang, H. Niimi, and G. Lucovsky, J. Appl. Phys. 83, 2327 (1998).
28. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
29. Z. Xu, M. Houssa, S. D. Gendt, and M. Heyns, Appl. Phys. Lett. 80, 1975 (2002).
30. M. Houssa, M. Tuominen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys. 87, 8615 (2000).
31. K. Chen, H. C. Warm, J. Dunster, P. K. Ko, C. Hu, and M. Yoshida, Solid-State Electron. 39, 1515 (1996).
32. K. Chen, C. Hu, P. Fang, M. R. Lin, and D. L. Wollesen, IEEE Trans. Electron Devices 44, 1951 (1997).
33. S. Mathew, L. K. Bera, N. Balasubramanian, M. S. Joo, and B. J. Cho, Thin Solid Films 462-463, 11 (2004).
34. F. Lime, K. Oshima, M. Casse, G. Ghibaudo, S. Cristoloveanu, B. Guillaumot, and H. Iwai, Solid-State Electron. 47, 1617 (2003).