Improved film growth and flatband voltage control of ALD HFO2 and HF-AL-O with n+ poly-Si gates using chemical oxides and optimized post-annealing

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 88-89

  Wilk, G D ^a   Green, M L ^a   Ho, M Y ^a   Busch, B W ^a   Sorsch, T W ^a   Klemens, F P ^a   Brijs, B ^a   Van Dover, R B ^a   Kornblit, A ^a   Gustafsson, T ^a   Garfunkel, E ^a   Hillenius, S ^a   Monroe, D ^a   Kalavade, P ^a   Hergenrother, J M ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HAFNIUM COMPOUNDS; POLYSILICON; VOLTAGE CONTROL;

ATOMIC LAYER DEPOSITION (ALD);

GATES (TRANSISTOR);

EID: 0036045182     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)