Hot carrier reliability of HfSiON NMOSFETs with poly and TiN metal gate

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 99-100

  Sim, J H ^a,c   Lee, B H ^b   Choi, R ^a,c   Matthews, K ^c   Kwong, D L ^a   Larson, L ^c   Tsui, P ^c   Bersuker, G ^c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b International SEMATECH ^*  (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIELECTRIC MATERIALS; ELECTRON TRAPS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HOT CARRIERS; LEAKAGE CURRENTS; PARAMETER ESTIMATION; RELIABILITY; TITANIUM NITRIDE;

CARRIER DEGRADATION; HFSION GATE DIELECTRICS; METAL GATES; METAL OXIDES;

MOSFET DEVICES;

EID: 18044368269     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367802     Document Type: Conference Paper

References (8)

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4. A. Kumar, VLSI, p. 152, 2003
5. C. D. Young et al, IRW, p. 28, 2003
6. G. Bersuker et al., Materials Today, 26, Jan 2004
7. G. Bersuker et al, to be published in IRPS Proceedings, 2004.
8. B.H. Lee et al, to be published in IRPS Proceedings, 2004.