Effects of annealing temperature on the characteristics of HfSi xOy/HfO2 high-k gate oxides

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1347-1350

  Kim, H D ^a   Roh, Y ^a   Lee, Y ^a   Lee, J E ^a   Jung, D ^a   Lee, N E ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; EQUIVALENT OXIDE THICKNESS (EOT); LEAKAGE CURRENT; PLASMA GENERATION GAS;

ANNEALING; BINDING ENERGY; CURRENT DENSITY; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; MAGNETRON SPUTTERING; MOS DEVICES; MOSFET DEVICES; PERMITTIVITY; SILICA; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 4344584106     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1743119     Document Type: Conference Paper

References (13)

1. S. H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett. 18, 206 (1997).
2. H. S. Kim, S. A. Campbell, and D. C. Gilmer, IEEE Electron Device Lett. 18, 465 (1997).
3. G. B. Alers, D. J. Werder, Y. Chabal, H. C. Lu, E. P. Gusev, E. Garfunkel, T. Gustafsson, and R. S. Urdahl, Appl. Phys. Lett. 73, 1517 (1998).
4. C. Basceri, S. K. Streiffer, and A. I. Kingon, J. Appl. Phys. 82, 2497 (1997).
5. B. H. Lee, L. Kang, R. Nieh, W. Qi, and J. C. Lee, Appl. Phys. Lett. 76, 1926 (2000).
6. L. Kang, B. H. Lee, W. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi, and J. C. Lee, IEEE Electron Device Lett. 21, 181 (2000).
7. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).
8. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
9. W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Ngai, S. Banerjee, and J. C. Lee, Tech. Dig. Int. Electron Devices Meet. 145 (1999).
10. W. Qi, R. Nieh, E. Dharmarajan, B. H. Lee, Y. Jeon, L. Kang, K. Onishi, and J. C. Lee, Appl. Phys. Lett. 77, 1704 (2000).
11. L. Manchanda, M. L. Green, R. B. van Dover, M. D. Morris, A. Kerber, Y. Hu, J.-P. Han, P. J. Silverman, T. W. Sorsch, G. Weber, V. Donnelly, K. Pelhos, F. Klemens, N. A. Ciampa, A. Kornblit, Y. O. Kim, J. E. Bower, D. Barr, E. Ferry, D. Jacobson, J. Eng, B. Busch, and H. Schulte, Tech. Dig. Int. Electron Devices Meet. 23 (2003).
12. H. Kang, Y. Roh, G. Bae, D. Jung, and C.-W. Yang, J. Vac. Sci. Technol. B 20, 1360 (2002).
13. Y. C. Quan, J. E. Lee, H. Kang, Y. Roh, D. Jung, and C.-W. Yang, Jpn. J. Appl. Phys., Part l 41, 6904 (2002).