Charge trapping effects in HfSiON dielectrics on the ring oscillator circuit and the single stage inverter operation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 485-488

  Kang, C Y ^a   Choi, R ^b   Sim, J H ^b   Young, C ^b   Lee, B H ^b,c   Bersuker, G ^b   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING MECHANISM; CIRCUIT SIMULATION; PROPAGATION DELAY; RING OSCILLATOR CIRCUITS; CHARGE-TRAPPING EFFECTS; CIRCUIT OPERATION; FAST TRANSIENTS; HFSION DIELECTRICS; HIGH- K; INVERTER OPERATIONS; PROPAGATION DELAYS; SINGLE-STAGE INVERTERS; TRANSIENT CHARGE TRAPPING;

CAPACITANCE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; HAFNIUM COMPOUNDS; MOSFET DEVICES; OSCILLATORS (ELECTRONIC); PERMITTIVITY; SILICA; THRESHOLD VOLTAGE; CHARGE TRAPPING; ELECTRIC INVERTERS; ELECTRIC NETWORK ANALYSIS; GERMANIUM COMPOUNDS; HELIUM; SILICON COMPOUNDS;

DIELECTRIC DEVICES; TIMING CIRCUITS;

EID: 21644482313     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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