Statistics of competing post-breakdown failure modes in ultrathin MOS devices

IEEE Transactions on Electron Devices

Volumn 53, Issue 2, 2006, Pages 224-234

  Suñé, Jordi ^a   Wu, Ernest Y ^b   Lai, Wing L ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Dielectric breakdown; MOS devices; Reliability theory

Indexed keywords

EXTRAPOLATION; GATES (TRANSISTOR); MATHEMATICAL MODELS; OXIDES; RELIABILITY THEORY; STATISTICAL METHODS;

DIELECTRIC BREAKDOWN; POST-BREAKDOWN FAILURE; ULTRATHIN MOS DEVICES;

MOS DEVICES;

EID: 31744452012     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.861597     Document Type: Article

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