Extending two-element capacitance extraction method toward ultraleaky gate oxides using a short-channel length

IEEE Electron Device Letters

Volumn 25, Issue 12, 2004, Pages 819-821

  Goo, Jung Suk ^a   Mantei, Tilo ^b   Wieczorek, Karsten ^b   En, William G ^a   Icel, Ali B ^a  

^a ADVANCED MICRO DEVICES   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Capacitance measurement; MOS devices; MOSFETs; Thin film capacitors; Tunneling

Indexed keywords

CAPACITANCE MEASUREMENT; CAPACITORS; ELECTRIC CURRENTS; ELECTRIC DISTORTION; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; MOS DEVICES; THIN FILM DEVICES;

CAPACITANCE EXTRACTION; CAPACITANCE VOLTAGE CHARACTERISTICS; SHORT CHANNEL LENGTH; THIN FILM CAPACITORS; TUNNELING CURRENT; ULTRALEAKY GATE OXIDES;

MOSFET DEVICES;

EID: 10644270887     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.839209     Document Type: Article

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