Mobility enhancement of high-k gate stacks through reduced transient charging

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 367-370

  Kirsch, P D ^a,b   Sim, J H ^a   Song, S C ^a   Krishnan, S ^a   Peterson, J ^a   Li, H J ^a,c   Quevedo Lopez, M ^a,c   Young, C D ^a   Choi, R ^a   Moumen, N ^a,b   Majhi, P ^a,d   Wang, Q ^e   Ekerdt, J G ^e   Bersuker, G ^a   Lee, B H ^a,b  

^a SEMATECH   (United States)

^b IBM   (United States)

^c Infineon ^*

^d INTEL CORPORATION   (United States)

^e The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); LOW ENERGY ION SCATTERING (LEIS); X-RAY REFLECTIVITY (XRR);

ELECTRIC CHARGE; ELECTRON MOBILITY; ELECTRON TRAPS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSIENTS; X RAY ANALYSIS;

GATES (TRANSISTOR);

EID: 33746489728     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546661     Document Type: Conference Paper

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