Physical model of BTI, TDDB and SILC in HfO2-based high-k gate dielectrics

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 129-132

  Torii, K ^a   Shiraishi, K ^b,d   Miyazaki, S ^c   Yamabe, K ^b,d   Boero, M ^b   Chikyow, T ^d   Yamada, K ^d,e   Kitajima, H ^a   Arikado, T ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRODES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HYDROGEN; LEAKAGE CURRENTS; MATHEMATICAL MODELS; OXYGEN; SILICA; THERMODYNAMIC STABILITY; CHARGE INJECTION; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; OXYGEN VACANCIES;

BIAS TEMPERATURE INSTABILITY (BTI); GENERALIZED GRADIENT APPROXIMATION (GGA); STRESS-INDUCED LEAKAGE CURRENTS (SILC); TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

DIELECTRIC DEVICES; SILICON COMPOUNDS;

DUAL-LAYERS; ELECTRON CURRENTS; GATE INSULATOR; H-TERMINATION; HIGH- K; HIGH-K GATE DIELECTRICS; HOLES INJECTION; MICROSCOPIC MECHANISMS; PHYSICAL MODELLING; TRAP ASSISTED TUNNELING;

EID: 20444463961     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. H. Kageshima and K. Shiraishi, Phys. Rev. Lett., 81 (1998) p.5936
2. K. Torii et al., Digest Symp. VLSI Tech. p. 112 (2004)
3. H. Sim and H.Hwang, Appl. Phys. Lett., 81 (2002) 4038
4. M. Haussa, S. DeGendt, J,L, Autran, G. Groesneken and M.M.Heyns Digest Symp. VLSI Tech. p. 212 (2004)
5. A.S. Foster, F. Lopez Gejo, A.L. Shluger and R. M. Nieminen, Phys. Rev. B, 65 (2002) 174117
6. M. Houssa et al., J. Appl. Phys., 87 (2000) 8615