A new breakdown failure mechanism in HfO 2 gate dielectric

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 347-352

  Ranjan, R ^a   Pey, K L ^a   Tang, L J ^a,b   Tung, C H ^b   Groeseneken, G ^c   Radhakrishnan, M K ^d   Kaczer, B ^c   Degraeve, R ^c   De Gendt, S ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c IMEC   (Belgium)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Breakdown; Dielectric breakdown induced epitaxy; HfO 2; High k gate dielectrics

Indexed keywords

DIELECTRIC BREAKDOWN INDUCED EPITAXY; GATE DIELECTRIC; HIGH K GATE DIELECTRICS; METAL OXIDE;

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTROMIGRATION; EPITAXIAL GROWTH; FAILURE ANALYSIS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; MICROSTRUCTURE; MOSFET DEVICES; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC MATERIALS;

EID: 3042661888     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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