Impact of temperature-accelerated voltage stress on PMOS RF performance

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 4, 2004, Pages 664-669

  Yu, Chuanzhao ^a   Liu, Yi ^a   Sadat, Anwar ^a   Yuan, J S ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

Breakdown (BD); Circuit simulation; Hot carriers (HCs); Modeling; Negative bias temperature instability (NBTI); Radio frequency (RF); Temperature accelerated stress

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; HOT CARRIERS; MATHEMATICAL MODELS; STRESSES; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TRANSDUCERS;

BREAKDOWN (BD); NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); RADIO FREQUENCY (RF) CIRCUIT SIMULATION; TEMPERATURE-ACCELERATED STRESS;

MOS DEVICES;

EID: 13444259568     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.841249     Document Type: Article

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