Stress polarity dependence of degradation and breakdown of SIO2/high-K stacks

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 23-28

  Degraeve, R ^a   Kauerauf, T ^a,b   Kerber, A ^c   Cartier, E ^c   Govoreanu, B ^a,b   Roussel, Ph ^a   Pantisano, L ^a   Blomme, P ^a,b   Kaczer, B ^a   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c International Sematech Affiliated to IMEC ^*  (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; RELIABILITY;

BULK PROPERTIES; CONDUCTION MECHANISM; CONSTITUTIVE LAYER; DEGRADATION MECHANISM; INJECTED CARRIERS; POLARITY DEPENDENCE; STRESS CONDITION; TIME DEPENDENT DIELECTRIC BREAKDOWN;

DIELECTRIC MATERIALS;

EID: 84955299270     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197715     Document Type: Conference Paper

References (11)

1. 2 gate dielectrics", VLSI Technology Symp. Digest of technical papers, pp 78-79, 2002.
2. 2 MOSFETs", IEDM Tech. Dig., pp 659-662, 2001
3. 2 under dynamic and constant voltage stress", IEDM Tech. Dig., pp 629-633, 2002
4. 2 stack", IEDM Tech. Dig., pp. 327-330, 1999.
5. J. R. Hauser et al, Characterization and Metrology for ULSI Technology, 1998 International Conference, p 235
6. R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, Ph. Roussel, H. E. Maes, "New insights in the relation between electron trap generation and the statistical properties of oxide breakdown", IEEE Trans. Elec. Dev., vol. 45, No. 4, pp. 904-911,1998.
7. M. A. Alam, J. Bude, A. Ghetti, "Field acceleration for oxide breakdown - Can an accurate anode hole injection model resolve the E vs. 1/E controversy?", Proc. IRPS, pp. 21-26, 2000.
8. D. J. DiMaria, J. H. Stathis, "Anode hole injection, defect generation, and breakdown in ultrathin silicon oxide films", J. Appl. Phys., Vol. 89, No. 9, pp. 5015-5024, 2001.
9. Ph. Roussel, R. Degraeve, G. Van den bosch, B. Kaczer, G. Groeseneken, "Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultrathin gate dielectrics", IEEE Trans. Device and Materials Reliability, vol. 1, no. 2, pp. 120-127, 2001
10. B. P. Linder, J. H. Stathis, R. A. Wachnik, E. Wu, A. Cohen, A. Ray, A. Vayshenker, "gate oxide breakdown under current limited constant voltage stress", VLSI Technology Digest of technical papers, pp. 214-215,2000.
11. F. Monsieur et al., "Wear-out, breakdown occurrence and failure detection in 18-25 A ultrathin oxide", Microelectronics Reliab., vol 41, pp. 1035-1039,2001.