Thermal phenomena in nanoscale transistors

Journal of Electronic Packaging

Volumn 128, Issue 2, 2006, Pages 102-108

  Pop, Eric ^a   Goodson, Kenneth E ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; HEAT CONDUCTION; MICROPROCESSOR CHIPS; NANOSTRUCTURED MATERIALS; THERMOANALYSIS;

BALLISTIC ELECTRON TRANSPORT; MICROPROCESSOR ENGINEERING; NANOMETER SCALE HOT SPOTS; NANOSCALE TRANSISTORS;

TRANSISTORS;

EID: 33845714690     PISSN: 10437398     EISSN: None     Source Type: Journal    
DOI: 10.1115/1.2188950     Document Type: Article

References (48)

1. "International Technology Roadmap for Semiconductors (ITRS)," http:// public.itrs.net.
2. Borkar, S., 2001, "Low Power Design Challenges for the Decade," Design Automation Conference, pp. 293-296.
3. Liu, C. C., Zhang, J., Datta, A. K., and Tiwari, S., 2002, "Heating Effects of Clock Drivers in bulk, SOI, and 3-D CMOS," IEEE Electron Device Lett., 23, pp. 716-718.
4. Mahajan, R., Nair, R., Wakharkar, V., Swan, J., Tang, J., and Vandentop, G., 2002. "Emerging Directions For Packaging Technologies," Intel Technol. J., 6, pp. 62-75.
5. Sverdrup, P. G., Ju, Y. S., and Goodson, K. E., 2001. "Sub-Continuum Simulations of Heat Conduction in Silicon-on-Insulator Transistors," J. Heat Transfer, 123, pp. 130-137.
6. Pop, E., Banerjee, K., Sverdrup, P. G., Dutton, R. W., and Goodson, K. E., 2001, "Localized Heating Effects and Scaling of sub-0.18 Micron CMOS Devices," presented at the IEEE Intl. Electron Devices Heeling (IEDM), Washington, DC, pp. 677-680.
7. Lundstrom, M., 2000, Fundamentals of Carrier Transport, 2nd ed., Cambridge Univ. Press, Cambridge.
8. Ju, Y. S., and Goodson, K. E., 1999, "Phonon Scattering in Silicon Thin Films With Thickness of Order 100 nm," Appl. Phys. Lett., 74, pp. 3005-3007.
9. Mazumder, S., and Majumdar, A., 2001, "Monte Carlo Study of Phonon Transport in Solid Thin Films Including Dispersion and Polarization," J. Heat Transfer, 123, pp. 749-759.
10. Esseni, D., Mastrapasqua, M., Celler, G. K., Fiegna, C., Selmi, L., and Sangiorgi, E., 2001, "Low Field Electron and Hole Mobility of SOI Transistors Fabricated on Ultraihin Silicon Films For Deep Submicrometer Technology Application," IEEE Trans. Electron Devices, 48, pp. 2842-2850.
11. Ferry, D. K., 2000, Semiconductor Transport, Taylor & Francis.
12. Wachutka, G. K., 1990, "Rigorous Thermodynamic Treatment of Heat Generation and Conduction in Semiconductor Device Modeling," IEEE Trans. Electron Devices, 9, pp. 1141-1149.
13. Pop, E., Dutton, R. W., and Goodson, K. E., 2004, "Analytic Band Monte Carlo Model for Electron Transport in Si Including Acoustic and Optical Phonon Dispersion," J. Appl. Phys., 96, p. 4998.
14. Pop, E., Dutton, R. W., and Goodson, K. E., 2005, "Monte Carlo Simulation of Joule Heating in Bulk and Strained Silicon," Appl. Phys. Lett., 86, p. 082101.
15. Pop, E., Roulette, J., Dutton, R. W., and Goodson, K. E., 2005, "Joule Heating Under Quasi-Ballistic Transport Conditions in Bulk and Strained Silicon Devices," presented at Intl. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan, pp. 307-310.
16. Long, D., 1960. "Scattering of Conduction Electrons by Lattice Vibrations in Silicon," Phys. Rev., 120, p. 2024.
17. Jacoboni, C., and Reggiani, L., 1983, "The Monte Carlo Method for the Solution of Charge Transport in Semiconductors With Applications to Covalent Materials," Rev. Mod. Phys., 55, pp. 645-703.
18. Sinha, S., Schilling, P. K., Phillpot, S. R., and Goodson, K. E., 2005, "Scattering of g-Process LO Phonons at Hotspots in Silicon," J. Appl. Phys., 97, p. 023702.
19. Balandin, A., and Wang, K. L., 1998, "Significant Decrease of the Lattice Thermal Conductivity Due to Phonon Confinement in a Free Standing Semi-conductor Quantum Well," Phys. Rev. B, 58, pp. 1544-1549.
20. "The NSF/NCN Nanotechnology Simulation Hub," http://nanohub.org.
21. Pop, E., Dutton, R. W., and Goodson, K. E., 2003, "Thermal Analysis of Ultra-Thin Body Device Scaling," presented at the IEEE Intl. Electron Devices Meeting (IEDM), Washington, DC, pp. 883-886.
22. Liu, W., and Asheghi, M., 2005, "Thermal Conduction in Ultrathin Pure and Doped Single-Crystal Silicon Layers at High Temperature," J. Appl. Phys., 98, p. 123523.
23. Li, D., Wu, Y., Kim, P., Shi, L., Yang, P., and Majumdar, A., 2003, "Thermal Conductivity of Individual Silicon Nanowires," Appl. Phys. Lett., 83, pp. 2934-2936.
24. Yamane, T., Nagai, N., Katayama, S., and Todoki, M., 2002, "Measurement of the Thermal Conductivity of Silicon Dioxide Thin Films Using a 3-Omega Method," J. Appl. Phys., 91, pp. 9772-9776.
25. Chen, G., 1996, "Nonlocal and Nonequilibrium Heat Conduction in the Vicinity of Nanoparticles," J. Heat Transfer, 118, pp. 539-545.
26. Narumanchi, S. V.J., Murthy, J. Y., and Amon, C. H., 2004, "Submicron Heat Transport Model in Silicon Accounting For Phonon Dispersion and Polarization," J. Heat Transfer, 126, pp. 946-955.
27. Sinha, S., Pop, E., Dutton, R. W., and Goodson, K. E., 2006, "Non-Equilibrium Phonon Distributions in Sub-100 nm Silicon Transistors," ASME J. Heat transfer, accepted for publication.
28. Sinha, S., Pop, E., and Goodson, K. E., 2004, "A Split-Flux Model For Phonon Transport Near Hotspots," Presented at Intl. Mech. Eng. Congress and Expo (IMECE), Anaheim, CA.
29. Lundstrom, M., and Ren, Z., 2002, "Essential Physics of Carrier Transport in Nanoscale MOSFETs," IEEE Trans. Electron Devices, 49, pp. 133-141.
30. Pop, E., Chui, C. O., Sinha, S., Goodson, K. E., and Dutton, S. W., 2004, "Electro-Thermal Comparison and Performance Optimization of Thin-Body SOI and GOI MOSFETs," presented at IEEE Intl. Electron Devices Mtg. (IEDM), San Francisco, CA, pp. 411-414.
31. Su, L. T., Chung, J. E., Goodson, K. E., and Flik, M. I., 1994, "Measurement and Modeling of Self-Heating in SOI NMOSFETs," IEEE Trans. Electron Devices, 41, pp. 69-75.
32. Pop, E., Sinha, S., and Goodson, K. E., 2006, "Heat Generation and Transport in Nanometer Scale Transistors," Proc. IEEE, accepted for publication.
33. Tenbrock, B., Lee, M. S. L., Redman-White, W., Bunyan, R. J. T., and Uren, M. J., 1996, "Self-Heating Effects in SOI MOSFETs and their Measurement by Small Signal Conductance Techniques," IEEE Trans Electron Devices, 43, pp. 2240-2248.
34. Jin, W., Liu, W., Fung, S. K. H., Chan, P. C. H., and Hu, C., 2001, "SOI Thermal Impedance Extraction Methodology and its Significance For Circuit Simulation," IEEE Trans. Electron Devices, 48, pp. 730-736.
35. Jenkins, W. A., and Rim, K., 2002, "Measurement of the Effect of Self-Healing in Strained-Silicon MOSFETs," IEEE Trans. Electron Devices, 23, pp. 360-362.
36. Polonsky, S., and Jenkins, K. A., 2004, "Time-Resolved Measurements of Self-Heating in SOI and Strained- Silicon MOSFETs Using Photon Emission Microscopy," IEEE Trans. Electron Devices, 25, pp. 208-210.
37. Chui, C. O., Kim, H., McIntyre, P. C., and Saraswat, K. C., 2003, "A Germanium NMOSFET Process Integrating Metal Gate and Improved High-k Dielectric," presented at IEEE Intl. Electron Devices Meeting (IEDM), Washington, DC, pp. 437-440.
38. 2 Gate Dielectrics," Appl. Phys. Lett., 83, p. 2432.
39. Cui, Y., Zhong, Z., Wang, D., Wang, W. U., and Lieber, C. M., 2003, "High Performance Silicon Nanowire Field Effect Transistors," Nano Lett., 3, pp. 149-152.
40. Tilke, A., Pescini, L., Erbe, A., Lorenz, H., and Blick, R. H., 2002, "Electron-Phonon Interaction in Suspended Highly Doped Silicon Nanowires," Nano-technology, 13, p. 491.
41. Javey, A., Qi, P., Wang, Q., and Dai, H., 2004, "Ten- to 50-nm-Long Quasi-Ballistic Carbon Nanotube Devices Obtained Without Complex Lithography," Proc. Natl. Acad. Sci. U.S.A., 101, p. 13408.
42. Javey, A., Guo, J., Wang, Q., Lundstrom, M., and Dai, H., 2003, "Ballistic Carbon Nanotube Field-Effect Transistors," Nature, 424, pp. 654-657.
43. Javey, A., Guo, J., Paulsson, M., Wang, Q., Mann, D., Lundstrom, M., and Dai, J. H., 2004, "High-Field Quasiballistic Transport in Short Carbon Nano-tubes," Phys. Rev. Lett., 92, p. 106804.
44. Yao, Z., Kane, C. L., and Dekker, C., 2000, "High-Field Electrical Transport in Single-Wall Carbon Nanotubes," Phys. Rev. Lett., 84, pp. 2941-2944.
45. Pop, E., Mann, D., Wang, Q., Goodson, K. E., and Dai, H. J., 2006, "Thermal Conductance of on Individual Single-Wall Carbon Nanotube Above Room Temperature," Nano Lett., 6, pp. 96-100.
46. Pop, E., Mann, D., Cao, J., Wang, Q., Goodson, K. E., and Dai, H. J., 2005, "Negative Differential Conductance and Hot Phonons in Suspended Nanotube Molecular Wires," Phys. Rev. Lett., 95, p. 155505.
47. Pop, E., Mann, D., Reifenberg, J., Goodson, K. E., and Dai, H. J., 2005, "Electro-Thermal Transport in Metallic Single-Wall Carbon Nanotubes For Interconnect Applications," Presented at IEEE Intl. Electron Devices Meeting (IEDM), Washington, DC, pp. 253-256.
48. Kuroda, M. A., Cangellaris, A., and Leburton, J.-P., 2005, "Nonlinear Transport and Heat Dissipation in Metallic Carbon Nanotubes," Phys. Rev. Lett., 95, p. 266803.