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Nanotechnology

Volumn 13, Issue 4, 2002, Pages 491-494

Electron-phonon interaction in suspended highly doped silicon nanowires

(5) Tilke, A a,b Pescini, L a Erbe, A a,c Lorenz, H a Blick, R H a

a UNIVERSITY OF MUNICH (Germany)

b INFINEON TECHNOLOGIES AG (Germany)

c NOKIA RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC WIRE; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; ENERGY DISSIPATION; NANOSTRUCTURED MATERIALS; PHONONS; RELAXATION PROCESSES; SEMICONDUCTOR DOPING; TUNNEL JUNCTIONS;

DRAIN SOURCE BIAS; HOT ELECTRONS; NANOWIRES; RANDOM DOPANT FLUCTUATIONS;

SEMICONDUCTING SILICON;

EID: 0036691123 PISSN: 09574484 EISSN: None Source Type: Journal
DOI: 10.1088/0957-4484/13/4/310 Document Type: Article

Times cited : (35)

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