Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 4998-5005

  Pop, Eric ^a   Dutton, Robert W ^a   Goodson, Kenneth E ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT; ELECTRON-PHONON SCATTERING; PHONON DISPERSION; SCATTERING MECHANISMS;

ALGORITHMS; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; IMPACT IONIZATION; MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; PHONONS;

SILICON;

EID: 4444351507     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1788838     Document Type: Article

References (37)

1. C. Canali, C. Jacoboni, F. Nava, G. Ottaviani, and A. Alberigi-Quaranta, Phys. Rev. B 12, 2265 (1975).
2. C. Jacoboni and L. Reggiani Rev. Mod. Phys. 55, 645 (1983).
3. J. Y. Tang and K. Hess, J. Appl. Phys. 54, 5139 (1983).
4. M. V. Fischetti and S. E. Laux, Phys. Rev. B 38, 9721 (1988).
5. N. Sano, T. Aoki, M. Tomizawa, and A. Yoshii, Phys. Rev. B 41, 12122 (1990).
6. C. Jacoboni, R. Minder, and G. Maini, J. Phys. Chem. Solids 36, 1129 (1975).
7. R. Brunetti, C. Jacoboni, F. Nava, and L. Reggiani, J. Appl. Phys. 52, 6713 (1981).
8. T. Yamada, J.-R. Zhou, H. Miyata, and D. K. Ferry, IEEE Trans. Electron Devices 41, 1513 (1994).
9. B. Fischer and K. R. Hofmann, Appl. Phys. Lett. 76, 583 (2000).
10. P. D. Yoder and K. Hess, Semicond. Sci. Technol. 9, 852 (1994).
11. T. Kunikiyo, M. Takenaka, Y. Kamakura, M. Yamaji, H. Mizuno, M. Morifuji, K. Taniguchi, and C. Hamaguchi, J. Appl. Phys. 75, 297 (1994).
12. B. Winstead and U. Ravaioli, IEEE Trans. Electron Devices 50, 440 (2003).
13. A. Duncan, U. Ravaioli, and J. Jakumeit, IEEE Trans. Electron Devices 45, 867 (1998).
14. F. M. Bufler, Y. Asahi, H. Yoshimura, C. Zechner, A. Schenk, and W. Fichtner, IEEE Trans. Electron Devices 50, 418 (2003)
15. E. Pop, R. W. Dutton, and K. E. Goodson, in Simulation of Semiconductor Processes and Devices (Boston, MA, 2003), pp. 121-124.
16. M. Lundstrom, Fundamentals of carrier transport, 2nd ed. (Cambridge University Press, Cambridge, 2000).
17. K. Tomizawa, Numerical simulation of submicron semiconductor devices (Artech House, Boston, 1993).
18. It is this stochastic nature of the Monte Carlo simulation method that provides its name, a reference to the gambling opportunities in the eponymous Mediterranean city.
19. M. A. Green, J. Appl. Phys. 67, 2944 (1990).
20. D. Long, Phys. Rev. 120, 2024 (1960).
21. C. Hamaguchi, Basic semiconductor physics (Springer, New York, 2001).
22. C Herring and E. Vogt, Phys. Rev. 101, 944 (1956).
23. A. Haug, Theoretical solid state physics (Pergamon Press, New York, 1972), Vol. 2.
24. H. Mizuno, K. Taniguchi, and C. Hamaguchi, Phys. Rev. B 48, 1512 (1993).
25. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).
26. M. V. Fischetti and S. E. Laux, Phys. Rev. B 48, 2244 (1993).
27. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, New York, 1996).
28. E. Sangiorgi, B. Ricco, and F. Venturi, IEEE Trans. Comput.-Aided Des. 7, 259 (1988).
29. E. Pop, Master's thesis, M. I. T., 1999.
30. K. Ismail, S. Nelson, J. Chu, and B. Meyerson, Appl. Phys. Lett. 63, 660 (1993).
31. S. Nelson, K. Ismail, J. Chu, and B. Meyerson, Appl. Phys. Lett. 63, 367 (1993).
32. M. M. Rieger and P. Vogl, Phys. Rev. B 48, 14276 (1993).
33. Good agreement with the theoretical results was serendipitous, as the current empirical set of deformation potentials had already been settled upon when the results of the ab initio calculations came to our attention.
34. S. Sinha, E. Pop, and K. E. Goodson, in Int. Mechanical Engineering Congress and Exp. (Anoheim CA, November 2004).
35. Monet, available in http://nanoheat.stanford.edu
36. M. H. Joegensen, Phys. Rev. B 18, 5657 (1978).
37. G. Dolling, in Symposium on Inelastic Scattering of Neutrons in Solid and Liquids Vol. 2, (IAEA, Chalkriver, 1963) pp. 37-48.