Advanced metrology needs for nanoelectronics lithography

Comptes Rendus Physique

Volumn 7, Issue 8, 2006, Pages 931-941

  Knight, Stephen ^a   Dixson, Ronald ^a   Jones, Ronald L ^a   Lin, Eric K ^a   Orji, Ndubuisi G ^a   Silver, R ^a   Villarrubia, John S ^a   Vladár, András E ^a   Wu, Wen li ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

CD AFM; CD SAXS; CD SEM; Scatterfield microscopy

Indexed keywords

EID: 33751527622     PISSN: 16310705     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.crhy.2006.10.004     Document Type: Short Survey

References (33)

1. International Technology Roadmap for Semiconductors. 2005 edition available online at. http://public.itrs.net/
2. Villarrubia J.S. Issues in line edge and linewidth roughness metrology. In: Seiler D.G., Diebold A.C., McDonald R., Ayre C.R., Khosla R.P., Zollner S., and Secula E.M. (Eds). Characterization and Metrology for ULSI Technology. 2005. AIP Conference Proceedings vol. 788 (2005), AIP Press, New York 386
3. Villarrubia J.S., Vladár A.E., Lowney J.R., and Postek M.T. Scanning electron microscope analog of scatterometry. Proc. SPIE 4689 (2002) 304-312
4. Vladár A.E., Radi Zs., Postek M.T., and Joy D.C. Nanotip electron gun for the scanning electron microscope. Scanning 28 3 (2005) 133
5. Vladár A.E., Postek M.T., and Vane R. Active monitoring and control of electron beam induced contamination. Proc. SPIE 4344 (2001) 835
6. Villarrubia J.S., Vladar A.E., and Postek M.T. A simulation study of repeatability and bias in the CD-SEM. Proc. SPIE 5038 (2003) 138-149
7. Toth M., and Knowles W.R. Secondary electron imaging of nonconductors with nanometer resolution. Appl. Phys. Lett. 88 (2006) 023105
8. Martin Y., and Wickramasinghe H.K. Method for imaging sidewalls by atomic force microscopy. Appl. Phys. Lett. 64 (1994) 2498-2500
9. Banke B., Archie C., Sendelbach M., Robert J., Slinkman J., Kaszuba P., Kontra R., DeVries M., and Solecky E. Reducing measurement uncertainty drives the use of multiple technologies for supporting metrology. Proc. SPIE 5375 (2004) 133-150
10. Lagerquist M.D., Bither W., and Brouillette R. Improving SEM linewidth metrology by two-dimensional scanning force microscopy. Proc. SPIE 2725 (1996) 494-503
11. Wilder K., Singh B., and Arnold W.H. Sub-0.35-micron critical dimension metrology using atomic force microscopy. Proc. SPIE 2725 (1996) 540-554
12. Marchman H.M., and Dunham N. AFM: A valid reference tool?. Proc. SPIE 3332 (1998) 2-9
13. Yedur S.K., and Singh B. Evaluation of atomic force microscopy: Comparison with electrical CD metrology and low voltage scanning electron microscopy. Proc. SPIE 3677 (1999) 43-52
14. Fuller S., and Young M. Photomask edge roughness characterization using an atomic force microscope. Proc. SPIE 3332 (1998) 433-440
15. Kant A., Taylor G., and Samarakone N. Quantitative line edge roughness characterization for sub-0.25 um DUV lithography. Proc. SPIE 3677 (1999) 35-42
16. Orji N.G., Martinez A., Dixson R., and Allgair J. Progress on implementation of a CD-AFM based reference measurement system. Proc. SPIE 6152 (2006) 61520O-1-12
17. Dixson R., Fu J., Orji N., Guthrie W., Allen R., and Cresswell M. CD-AFM reference metrology at NIST and SEMATECH. Proc. SPIE 5752 (2005) 324-336
18. Dixson R., and Guerry A. Reference metrology using a next generation CD-AFM. Proc. SPIE 5375 (2004) 633-646
19. Dixson R., Guerry A., Bennett M., Vorburger T., and Bunday B. Implementation of a reference measurement system using CD-AFM. Proc. SPIE 5038 (2003) 150-165
20. Dixson R., Guerry A., Bennett M., Vorburger T., and Postek M. Toward traceability for at line AFM dimensional metrology. Proc. SPIE 4689 (2002) 313-335
21. Dixson R.G., Allen R.A., Guthrie W.F., and Cresswell M.W. Traceable calibration of critical-dimension atomic force microscope linewidth measurements with nanometer uncertainty. J. Vac. Sci. Technol. B 23 (2005) 3028-3032
22. Cresswell M., Dixson R., Guthrie W., Allen R., Murabito C., Park B., Martinez de Pinillos J., and Hunt A. Critical dimension reference features with sub-five nanometer uncertainty. Proc. SPIE 5752 (2005) 288-303
23. Allen R.A., Cresswell M.W., Murabito C.E., Dixson R.G., and Bogardus E.H. Critical dimension calibration standards for ULSI metrology, in characterization and metrology for ULSI technology. AIP Conf. Proc. 683 (2003) 421-428
24. Cresswell M.W., Bogardus E.H., Martinez de Pinillos J.V., Bennett M.H., Allen R.A., Guthrie W.F., Murabito C.E., am Ende B.A., and Linholm L.W. CD reference materials for sub-tenth micrometer applications. Proc. SPIE 4689 (2002) 116-127
25. Villarrubia J., Dixson R., Jones S., Lowney J.R., Postek M.T., Allen R.A., and Cresswell M.W. Intercomparison of SEM, AFM, and electrical linewidths. Proc. SPIE 3677 (1999) 440-587
26. R. Attota, R.M. Silver, M. Bishop, E. Marx, J. Jun, M. Stocker, M. Davidson, R. Larrabee, Evaluation of new in-chip and arrayed line overlay target designs, in: Proc. SPIE Microlithography, 2004
27. Seligson J., Adel M., Izikson P., Levinski V., and Yaffe D. Target noise in overlay metrology. Proc. SPIE 5375 (2004) 403-412
28. Silver R.M., Attota R., Stocker M., Bishop M., Howard L., Germer T., Marx E., Davidson M., and Larrabee R. High-resolution optical metrology. Proc. SPIE 5752 (2005) 67
29. Silver R.M., Attota R., Stocker M., Bishop M., Jun J., Marx E., Davidson M., and Larrabee R. High-resolution optical overlay metrology. Proc. SPIE 5375 (2004) 78
30. Attota R., Silver R.M., Germer T., Bishop M., Larrabee R., Stocker M., and Howard L. Application of through-focus focus-metric analysis in high resolution optical microscopy. Proc. SPIE 5752 (2005)
31. Silver R.M., Attota R., Stocker M., Jun J., Marx E., Larrabee R., Russo B., and Davidson M. Comparison of measured optical image profiles of silicon lines with two different theoretical models. Proc. SPIE 4689 (2002) 00
32. Hu T., Jones R.L., Wu W.-L., Lin E.K., Lin Q., Keane D., Weigand S.J., and Quintana J.M. J. Appl. Phys. 96 (2004) 1983
33. Jones R.L., Hu T., Lin E.K., Wu W.L., Kolb R., Casa D.M., Bolton P.J., and Barclay G.G. Appl. Phys. Lett. 83 (2003) 4059