A simulation study of repeatability and bias in the CD-SEM

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5038 I, Issue , 2003, Pages 138-149

  Villarrubia, J S ^a   Vladar A E ^a   Postek, M T ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Critical dimension (CD) metrology; Linewidth metrology; Model based library; Precision; Repeatability; Resolution; Scanning electron microscopy (SEM)

Indexed keywords

ALGORITHMS; CALCULATIONS; COMPUTER SIMULATION; MONTE CARLO METHODS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE;

CRITICAL DIMENSION METROLOGY SCANNING ELECTRON MICROSCOPY; POWER SPECTRAL DENSITY; REPEATABILITY; SAMPLE-DEPENDENT BIAS; SOFTWARE PACKAGE MONSEL;

OPTICAL VARIABLES MEASUREMENT;

EID: 0141723694     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485012     Document Type: Conference Paper

References (10)

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