Scanning electron microscope analog of scatterometry

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4689 I, Issue , 2002, Pages 304-312

  Villarrubia, J S ^a   Vladar A E ^a   Lowney, J R ^a   Postek, M T ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Critical dimension (CD) metrology; Line shape; Linewidth metrology; Model based library; Scanning electron microscopy (SEM)

Indexed keywords

ELECTRONS; MEASUREMENTS; PHOTONS; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SIGNAL PROCESSING; SILICON;

CRITICAL DIMENSIONS (CD); OPTICAL SCATTEROMETRY;

OPTICAL DEVICES;

EID: 0036029340     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.473470     Document Type: Conference Paper

References (11)

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7. J.R. Lowney, A.E. Vladár, and M.T. Postek, "High-accuracy critical-dimension metrology using a scanning electron microscope," Proc. SPIE 2725, pp. 515-526 (1996); J.R. Lowney, "Application of Monte Carlo simulations to critical dimension metrology in a scanning electron microscope," Scanning Microscopy 10, pp. 667-678 (1996).
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11. Certain commercial equipment is identified in this report in order to describe the experimental and analytical procedures adequately. Such identification does not imply recommendation or endorsement by NIST, nor does it imply that the equipment identified is necessarily the best available for the purpose.