ZrB 2 Schottky diode contacts on n-GaN

Applied Surface Science

Volumn 253, Issue 4, 2006, Pages 2315-2319

  Khanna, R ^a   Ramani, K ^a   Cracium, V ^a   Singh, R ^a   Pearton, S J ^a   Ren, F ^b   Kravchenko, I I ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c University of Florida   (United States)

Author keywords

Contacts; GaN; Schottky

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; METALLIZING; SPUTTER DEPOSITION; ZIRCONIUM COMPOUNDS;

BARRIER HEIGHT; CURRENT MAGNITUDE; EPILAYERS;

SCHOTTKY BARRIER DIODES;

EID: 33751254739     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.04.041     Document Type: Article

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