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Volumn 81, Issue 17, 2002, Pages 3182-3184

Atomic arrangement at the AlN/ZrB2 interface

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ATOMIC ARRANGEMENT; ELEVATED TEMPERATURE; GAN EPILAYERS; GAN FILM; GROWTH OF GAN; HEXAGONAL PHASE; HIGH QUALITY; INTERFACE REGIONS; INTERMEDIATE LAYERS; LATTICE-MATCHED; LOW TEMPERATURES; LOW-DISLOCATION-DENSITY;

EID: 79956026100     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1516876     Document Type: Article
Times cited : (31)

References (11)
  • 10
    • 0041629088 scopus 로고    scopus 로고
    • and references therein. acz ACMAFD 1359-6454
    • Y. Champion and S. Hagège, Acta Mater. 45, 2621 (1997), and references therein. acz ACMAFD 1359-6454
    • (1997) Acta Mater. , vol.45 , pp. 2621
    • Champion, Y.1    Hagège, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.