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Volumn 81, Issue 17, 2002, Pages 3182-3184
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Atomic arrangement at the AlN/ZrB2 interface
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Author keywords
[No Author keywords available]
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Indexed keywords
ALN;
ATOMIC ARRANGEMENT;
ELEVATED TEMPERATURE;
GAN EPILAYERS;
GAN FILM;
GROWTH OF GAN;
HEXAGONAL PHASE;
HIGH QUALITY;
INTERFACE REGIONS;
INTERMEDIATE LAYERS;
LATTICE-MATCHED;
LOW TEMPERATURES;
LOW-DISLOCATION-DENSITY;
BORON;
BORON COMPOUNDS;
BUFFER LAYERS;
GALLIUM NITRIDE;
SUBSTRATES;
ZIRCONIUM;
INTERFACES (MATERIALS);
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EID: 79956026100
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1516876 Document Type: Article |
Times cited : (31)
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References (11)
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