Hall measurements and contact resistance in doped GaN/AlGaN heterostructures

Applied Physics Letters

Volumn 68, Issue 21, 1996, Pages 3022-3024

  Asif Khan, M ^a   Shur, M S ^a   Chen, Q ^a  

^a APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001446923     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116684     Document Type: Article

References (7)

1. M. S. Shur, B. Gelmont, C. Saavedra-Munoz, and G. Kelner, in Proceedings of the Fifth Conference on Silicon Carbide and Related Compounds, Institute of Physics Conference Series Number 137 (Institute of Physics, Bristol, 1994), p. 465.
2. M. Asif Khan, Q. Chen, C. J. Sun, M. S. Shur, and B. L. Gelmont, Appl. Phys. Lett. AIP 67, 1429 (1995).
3. M. A. Khan, M. S. Shur, J. N. Kuznia, J. Burm, and W. Schaff, Appl. Phys. Lett. AIP 66, 1083 (1995).
4. P. P. Ruden, M. S. Shur, A. I. Akinwande, J. Nohava, D. Grider, and J. H. Baek, IEEE Trans. Electron Devices INS 37, 2171 (1990).
5. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
6. G. Y. Robertson, in Physics and Chemistry of III-V Semiconductor Interfaces, edited by C. W. Wilmsen (Plenum, New York, 1983).
7. N. Braslau, J. Vac. Sci. Technol. AIP 19, 803 (1981).