Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the "advancing" Al/Ti metallization

Applied Physics Letters

Volumn 74, Issue 18, 1999, Pages 2652-2654

  Qiao, D ^a   Guan, Z F ^a   Carlton, J ^a   Lau, S S ^a   Sullivan, G J ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; METALLIZING; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

HETEROJUNCTIONS;

EID: 0032606822     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123927     Document Type: Article

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