Temperature and doping-dependent resistivity of Ti/Au/Pd/Au multilayer ohmic contact to n-GaN

Journal of Applied Physics

Volumn 91, Issue 11, 2002, Pages 9218-9224

  Lu, Changzhi ^a   Chen, Hongnai ^a   Lv, Xiaoliang ^a   Xie, Xuesong ^a   Mohammad, S Noor ^b  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b Howard University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BEST VALUE; CONTACT RESISTIVITIES; DONOR ATOMS; DOPING CONCENTRATION; DOPING DEPENDENCE; METAL LAYER; NARROW BAND GAP; NITROGEN VACANCIES; SPECIFIC CONTACT RESISTIVITY; TEMPERATURE DEPENDENCE; TRANSMISSION-LINE MEASUREMENTS;

ANNEALING; ELECTRIC CONTACTORS; MULTILAYERS; NANOCOMPOSITE FILMS; OHMIC CONTACTS; PALLADIUM; TITANIUM NITRIDE;

GALLIUM NITRIDE;

EID: 0036606998     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1471390     Document Type: Article

References (29)

1. For a recent review of issues germane to GaN-based devices see, S. N. Mohammad and H. Morkoç, Prog. Quantum Electron. 20, 361 (1996). pqe PQUEAH 0079-6727
2. S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, J. Appl. Phys. 87, 965 (2000). jap JAPIAU 0021-8979
3. J. S. Foresi and T. D. Moustakas, Appl. Phys. Lett. 62, 2859 (1993). apl APPLAB 0003-6951
4. J. Burm, K. Chu, W. A. Davis, W. J. Schaff, T. J. Eustis, and L. F. Eastman, Appl. Phys. Lett. 70, 464 (1997). apl APPLAB 0003-6951
5. B. P. Luther, S. E. Mohney, T. N. Jackson, M. A. Khan, Q. Chen, and J. W. Yang, Appl. Phys. Lett. 70, 57 (1997). apl APPLAB 0003-6951
6. S. D. Wolter, B. P. Luther, S. E. Mahoney, R. F. Karlicek, Jr. and R. S. Kern, Solid State Lett. 2, 151 (1999). 8sw ESLEF6 1099-0062
7. Z.-F. Fan, S. Noor Mohammad, W. Kim, O. Aktas, A. E. Botchkarev, and H. Morkoç, Appl. Phys. Lett. 68, 1672 (1996). apl APPLAB 0003-6951
8. S. Ruvimov, Z. Liliental-Weber, J. Washburn, D. Qiao, S. S. Lau, and P. K. Chu, Appl. Phys. Lett. 73, 2582 (1998). apl APPLAB 0003-6951
9. B. P. Luther, J. M. DeLucca, S. E. Moheny, and R. F. Karlicek, Jr., Appl. Phys. Lett. 71, 3859 (1997). apl APPLAB 0003-6951
10. D. B. Ingerly, Y. A. Chang, N. R. Perkins, and T. F. Kuech, Appl. Phys. Lett. 70, 108 (1997). apl APPLAB 0003-6951
11. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. C. Liu, C. M. Chang, W. C. Hung, J. S. Bow, and Y. C. Yu, J. Vac. Sci. Technol. B 18, 729 (2000). jvb JVTBD9 0734-211X
12. H. W. Jang, C. M. Jeon, J. K. Kim, and J. L. Lee, Appl. Phys. Lett. 78, 2015 (2001). apl APPLAB 0003-6951
13. N. A. Papanicolau, A. Edwards, M. V. Rao, J. Mittereder, and W. T. Anderson, J. Appl. Phys. 87, 380 (2000). jap JAPIAU 0021-8979
14. E. F. Chor, D. Zhang, H. Gong, G. L. Chen, and T. Y. F. Liew, J. Appl. Phys. 90, 1242 (2001). jap JAPIAU 0021-8979
15. J. D. Guo, C. I. Lin, M. S. Feng, F. M. Pan, G. C. Chi, and C. T. Lee, Appl. Phys. Lett. 68, 235 (1996). apl APPLAB 0003-6951
16. Dong-Feng Wang, Feng Shiwei, Changzhi Lu, Abhishek Motayed, Muzar Jah, S. Noor Mohammad, K. A. Jones, and L. Salamanca-Riba, J. Appl. Phys. 89, 6214 (2001). jap JAPIAU 0021-8979
17. Ching-Ting Lee and Hsiao-Wei Kao, Appl. Phys. Lett. 76, 2364 (2000). apl APPLAB 0003-6951
18. D. B. Ingerly, Y. Chen, R. S. William, T. Takeuchi, and Y. A. Chang, Appl. Phys. Lett. 77, 382 (2000). apl APPLAB 0003-6951
19. D. W. Kim and H. K. Baik, Appl. Phys. Lett. 77, 1011 (2000). apl APPLAB 0003-6951
20. G. Stareev, H. Kunzel, and G. Dortmann, J. Appl. Phys. 74, 7344 (1993); jap JAPIAU 0021-8979
21. see also, C. A. Mead, in Ohmic Contacts to Semiconductors, edited by B. Schwartz (Electrochemical Society, New York, 1969), pp. 3-16.
22. D. Qiao, L. Jia, L. S. Yu, P. M. Asbeck, S. S. Lau, S.-H. Lim, Z. Liliental-Weber, T. E. Haynes, and J. B. Barner, J. Appl. Phys. 89, 5543 (2001). jap JAPIAU 0021-8979
23. F. A. Padovani and R. A. Stratton, Solid-State Electron. 9, 695 (1966). sel SSELA5 0038-1101
24. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., (Wiley, New York, 1982) p. 251.
25. J. I. Pankove and E. P. Schade, Appl. Phys. Lett. 25, 53 (1974). apl APPLAB 0003-6951
26. A. Motayed, M. Wood, K. A. Jones, and S. Noor Mohammad (unpublished).
27. S. Ruvimov, Z. Liliental-Weber, J. Washburn, K. J. Duxstad, E. E. Haller, Z. F. Fan, S. Noor Mohammad, W. Kim, A. E. Botchkarev, and H. Morkoç, Appl. Phys. Lett. 69, 1556 (1996). apl APPLAB 0003-6951
28. C. A. Dimitriadis, Th. Karakostas, S. Logothetidis, G. Kamarinos, J. Brini, and G. Nouet, Solid-State Electron. 43, 1969 (1999). sel SSELA5 0038-1101
29. P. Boguslawski, E. L. Briggs, and J. Bernholc, Phys. Rev. B 51, 17255 (1995). prb PRBMDO 0163-1829