Effect of deposition conditions and annealing on W Schottky contacts on n-GaN

Materials Science in Semiconductor Processing

Volumn 7, Issue 1-2, 2004, Pages 95-98

  Mehandru, R ^a   Kang, S ^a   Kim, S ^a   Ren, F ^a   Kravchenko, I ^b   Lewis, W ^b   Pearton, S J ^a  

^a University of Florida   (United States)

^b NONE   (United States)

Author keywords

GaN; Schottky contact; Thermal stability; W contact

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; GROWTH (MATERIALS); OPTIMIZATION; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY;

ELECTRON AFFINITY; GAN; METAL WORK FUNCTION; SCHOTTKY CONTACT; W CONTACT;

SCHOTTKY BARRIER DIODES;

EID: 3242875515     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.01.002     Document Type: Article

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