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Volumn 84, Issue 17, 2004, Pages 3406-3408

Structure of 6H silicon carbide/silicon dioxide interface trapping defects

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRAP DEFECTS; PARAMAGNETIC CENTERS; SPIN QUANTUM NUMBER; SPIN-DEPENDENT RECOMBINATION (SDR);

EID: 2542479052     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1723693     Document Type: Article
Times cited : (23)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.